FDC8601
- Mfr.Part #
- FDC8601
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2.7A SUPERSOT6
- Stock
- 18,688
- In Stock :
- 18,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Feedback Cap-Max (Crss) :
- 5 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Packaging :
- Tape and Reel (TR)
- Length :
- 3mm
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 7.6 ns
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Turn On Delay Time :
- 4.5 ns
- Height :
- 1mm
- Terminal Position :
- Dual
- Rise Time :
- 1.3ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- Weight :
- 36mg
- Rds On (Max) @ Id, Vgs :
- 109m Ω @ 2.7A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Continuous Drain Current (ID) :
- 2.7A
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.6W Ta
- Nominal Vgs :
- 3 V
- Element Configuration :
- Single
- Threshold Voltage :
- 3V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Power Dissipation :
- 1.6W
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 2 ns
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 50V
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Width :
- 1.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- FDC8601

N-Channel Tape & Reel (TR) 109m Ω @ 2.7A, 10V ±20V 210pF @ 50V 5nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC8601 Description
FDC8601 is an N-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDC8601 is -55°C~150°C TJ and its maximum power dissipation are 1.6W Ta. FDC8601 has 6 pins and it is available in Tape & Reel (TR) packaging way. The FDC8601 is an N-channel MOSFET produced using the advanced Power Trench? process. It is suitable for use in load switch, synchronous rectifier, and primary switch applications.
FDC8601 Features
-
High performance trench technology for extremely low RDS (ON)
-
High power and current handling capability in a widely used surface-mount package
-
Fast switching speed
-
100% UIL tested
FDC8601 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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