FDC658P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

-4A

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Mount :

Surface Mount

Number of Pins :

6

Number of Terminations :

6

Element Configuration :

Single

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 15V

Threshold Voltage :

-1.7V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn-Off Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Fall Time (Typ) :

16 ns

Drain Current-Max (Abs) (ID) :

4A

Radiation Hardening :

No

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Length :

3mm

Width :

1.7mm

Voltage - Rated DC :

-30V

Rise Time :

14ns

Resistance :

50mOhm

Terminal Position :

Dual

JESD-609 Code :

e3

Current Rating :

-4A

Turn On Delay Time :

12 ns

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

Height :

1.1mm

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Weight :

36mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Transistor Application :

SWITCHING

Published :

2017

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.6W

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Power Dissipation-Max :

1.6W Ta