FDC658AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Dual Supply Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 15V

Width :

1.7mm

Continuous Drain Current (ID) :

4mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Vgs (Max) :

±25V

Threshold Voltage :

-1.8V

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Contact Plating :

Tin

Height :

900μm

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.6W Ta

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Lead Free :

Lead Free

Rise Time :

12ns

Power Dissipation :

1.6W

Resistance :

50mOhm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2017

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

16 ns

Turn On Delay Time :

7 ns

Drain to Source Voltage (Vdss) :

30V

Termination :

SMD/SMT

Terminal Position :

Dual

Nominal Vgs :

-1.8 V

Number of Channels :

1

Weight :

36mg

ECCN Code :

EAR99

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Feedback Cap-Max (Crss) :

90 pF

Number of Terminations :

6

FET Type :

P-Channel

Fall Time (Typ) :

12 ns

Length :

3mm

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 5V

Drain Current-Max (Abs) (ID) :

4A