FDC658AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Number of Elements :

1

Turn-Off Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 15V

Length :

3mm

Power Dissipation :

1.6W

FET Type :

P-Channel

Mount :

Surface Mount

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Height :

900μm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

30V

Feedback Cap-Max (Crss) :

90 pF

Weight :

36mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

-1.8 V

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4mA

Series :

PowerTrench®

Drain Current-Max (Abs) (ID) :

4A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Breakdown Voltage :

-30V

Transistor Application :

SWITCHING

Width :

1.7mm

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 5V

Turn On Delay Time :

7 ns

Number of Pins :

6

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.6W Ta

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-1.8V

Mounting Type :

Surface Mount

Dual Supply Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Max Junction Temperature (Tj) :

150°C

Published :

2017

JESD-609 Code :

e3

Element Configuration :

Single

Resistance :

50mOhm

Vgs (Max) :

±25V

Radiation Hardening :

No

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

10 Weeks

Number of Channels :

1

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

12 ns

ECCN Code :

EAR99

Rise Time :

12ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 10V