FDC655BN-F40
- Mfr.Part #
- FDC655BN-F40
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- N-CHANNEL POWERTRENCH MOSFET, LO
- Stock
- 20,681
- In Stock :
- 20,681
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Brand Name :
- ON Semiconductor
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 620 pF @ 15 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 6.3A, 10V
- Manufacturer :
- ON Semiconductor
- Package Shape :
- RECTANGULAR
- Technology :
- MOSFET (Metal Oxide)
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 30 V
- Number of Elements :
- 1
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.025 Ω
- JESD-30 Code :
- R-PDSO-G6
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 6
- Base Product Number :
- FDC655
- Power Dissipation-Max (Abs) :
- 1.6 W
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- SuperSOT™-6
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Package :
- Tape and Reel (TR)
- Power Dissipation (Max) :
- 800mW (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 30 V
- Feedback Cap-Max (Crss) :
- 90 pF
- Terminal Form :
- Gull wing
- Datasheets
- FDC655BN-F40

MOSFET (Metal Oxide) N-Channel 25mOhm @ 6.3A, 10V ±20V 620 pF @ 15 V 13 nC @ 10 V 30 V SOT-23-6 Thin, TSOT-23-6
FDC655BN-F40 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 620 pF @ 15 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30 V in order to maintain normal operation.Operating this transistor requires a 30 V drain to source voltage (Vdss).
FDC655BN-F40 Features
a 30 V drain to source voltage (Vdss)
FDC655BN-F40 Applications
There are a lot of ON Semiconductor
FDC655BN-F40 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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