FDC655BN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

6.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

25mOhm

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.3A, 10V

Additional Feature :

ULTRA-LOW RESISTANCE

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Feedback Cap-Max (Crss) :

90 pF

Weight :

36mg

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150°C

Length :

3mm

Mount :

Surface Mount

Number of Pins :

6

Rise Time :

4ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

Fall Time (Typ) :

4 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Turn On Delay Time :

6 ns

Pbfree Code :

yes

Series :

PowerTrench®

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Threshold Voltage :

1.9V

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Width :

1.7mm

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Terminal Position :

Dual

Number of Channels :

1

Current Rating :

6.3A

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Height :

1.1mm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

1.6W

Power Dissipation-Max :

1.6W Ta

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Nominal Vgs :

1.9 V

Contact Plating :

Tin