FDC655BN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

FET Type :

N-Channel

Turn On Delay Time :

6 ns

Rise Time :

4ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

13 Weeks

Power Dissipation :

1.6W

Height :

1.1mm

Threshold Voltage :

1.9V

Continuous Drain Current (ID) :

6.3A

Mount :

Surface Mount

Voltage - Rated DC :

30V

Series :

PowerTrench®

Current Rating :

6.3A

Operating Temperature :

-55°C~150°C TJ

Width :

1.7mm

Nominal Vgs :

1.9 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

90 pF

Number of Pins :

6

Number of Terminations :

6

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Junction Temperature (Tj) :

150°C

Qualification Status :

Not Qualified

Length :

3mm

Terminal Form :

Gull wing

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Fall Time (Typ) :

4 ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.3A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2006

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.6W Ta

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Channels :

1

Turn-Off Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

No SVHC

Contact Plating :

Tin

Resistance :

25mOhm

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Element Configuration :

Single

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Weight :

36mg

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1