FDC654P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Published :

2017

Terminal Form :

Gull wing

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

298pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Factory Lead Time :

10 Weeks

Weight :

36mg

Turn-Off Delay Time :

11 ns

Height :

1mm

REACH SVHC :

No SVHC

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

-3.6A

Resistance :

75mOhm

Lead Free :

Lead Free

Fall Time (Typ) :

13 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Rise Time :

13ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Threshold Voltage :

-1.9V

Voltage - Rated DC :

-30V

Power Dissipation :

1.6W

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Width :

1.7mm

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.6W Ta

Continuous Drain Current (ID) :

3.6A

Transistor Application :

SWITCHING

Number of Elements :

1

Radiation Hardening :

No

Vgs (Max) :

±20V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.6A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Element Configuration :

Single

Number of Terminations :

6

Turn On Delay Time :

6 ns

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-30V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®