FDC654P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Published :

2017

ECCN Code :

EAR99

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Weight :

36mg

Input Capacitance (Ciss) (Max) @ Vds :

298pF @ 15V

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.6A, 10V

Voltage - Rated DC :

-30V

Width :

1.7mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Power Dissipation-Max :

1.6W Ta

Power Dissipation :

1.6W

REACH SVHC :

No SVHC

Number of Pins :

6

Element Configuration :

Single

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

11 ns

Resistance :

75mOhm

Threshold Voltage :

-1.9V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Fall Time (Typ) :

13 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Current Rating :

-3.6A

Continuous Drain Current (ID) :

3.6A

Terminal Position :

Dual

Radiation Hardening :

No

Terminal Form :

Gull wing

Length :

3mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material :

SILICON

Turn On Delay Time :

6 ns

FET Type :

P-Channel

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Rise Time :

13ns

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Height :

1mm

Operating Mode :

ENHANCEMENT MODE