FDC653N
- Mfr.Part #
- FDC653N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5A SUPERSOT6
- Stock
- 3,985
- In Stock :
- 3,985
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Weight :
- 30mg
- Threshold Voltage :
- 1.7V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Nominal Vgs :
- 1.7 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 1.6W Ta
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Length :
- 3mm
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5A, 10V
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 7.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 15V
- Width :
- 1.7mm
- Packaging :
- Tape and Reel (TR)
- Dual Supply Voltage :
- 30V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Number of Terminations :
- 6
- Current Rating :
- 5A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Rise Time :
- 12ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 1.6W
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 12 ns
- Height :
- 1.1mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 5A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Drain Current-Max (Abs) (ID) :
- 5A
- Resistance :
- 35mOhm
- Element Configuration :
- Single
- Published :
- 1997
- Turn-Off Delay Time :
- 13 ns
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 10 Weeks
- Datasheets
- FDC653N

N-Channel Tape & Reel (TR) 35m Ω @ 5A, 10V ±20V 350pF @ 15V 17nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC653N N-Channel Enhancement Mode Power Field-Effect Transistors are made using a unique, high cell density technology called DMOS. This process is extremely dense and is designed to reduce the on-state resistance. These devices are specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits in which fast switching, as well as low power loss in the line.
FDC653N Features
RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
FDC653N Applications
Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
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