FDC653N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

35m Ω @ 5A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Contact Plating :

Tin

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5A

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

Published :

1997

Turn On Delay Time :

7.5 ns

JESD-609 Code :

e3

Element Configuration :

Single

Number of Channels :

1

Threshold Voltage :

1.7V

Width :

1.7mm

Rise Time :

12ns

Terminal Position :

Dual

Terminal Form :

Gull wing

Termination :

SMD/SMT

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Transistor Application :

SWITCHING

Nominal Vgs :

1.7 V

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Resistance :

35mOhm

Power Dissipation :

1.6W

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

Current Rating :

5A

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Pbfree Code :

yes

Length :

3mm

Power Dissipation-Max :

1.6W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

6

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

13 ns

REACH SVHC :

No SVHC

Height :

1.1mm

Weight :

30mg