FDC645N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.0055A

Mount :

Surface Mount

Fall Time (Typ) :

9 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Elements :

1

Power Dissipation-Max :

1.6W Ta

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.2A, 10V

ECCN Code :

EAR99

Number of Channels :

1

Dual Supply Voltage :

30V

Published :

2001

Packaging :

Tape and Reel (TR)

Rise Time :

9ns

Power Dissipation :

1.6W

Series :

PowerTrench®

Resistance :

26mOhm

Vgs (Max) :

±12V

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

35 ns

Threshold Voltage :

1.4V

Radiation Hardening :

No

Terminal Position :

Dual

Pbfree Code :

yes

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

FET Type :

N-Channel

Weight :

36mg

Nominal Vgs :

1.4 V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

5.5A

Number of Pins :

6

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Current Rating :

5.5A

Number of Terminations :

6