FDC645N
- Mfr.Part #
- FDC645N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5.5A SUPERSOT6
- Stock
- 6,000
- In Stock :
- 6,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1460pF @ 15V
- Threshold Voltage :
- 1.4V
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Dual Supply Voltage :
- 30V
- Factory Lead Time :
- 10 Weeks
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 4.5V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 30V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 5.5A
- Series :
- PowerTrench®
- Resistance :
- 26mOhm
- Element Configuration :
- Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Weight :
- 36mg
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Vgs (Max) :
- ±12V
- Turn On Delay Time :
- 8 ns
- Max Junction Temperature (Tj) :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 0.0055A
- Fall Time (Typ) :
- 9 ns
- Rise Time :
- 9ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.2A, 10V
- Turn-Off Delay Time :
- 35 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 1.6W Ta
- Power Dissipation :
- 1.6W
- Height :
- 1.1mm
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- Published :
- 2001
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Nominal Vgs :
- 1.4 V
- Current Rating :
- 5.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Datasheets
- FDC645N

N-Channel Tape & Reel (TR) 26m Ω @ 6.2A, 10V ±12V 1460pF @ 15V 21nC @ 4.5V SOT-23-6 Thin, TSOT-23-6
FDC645N Description
FDC645N is a type of N-channel PowerTrench? MOSFET provided by ON Semiconductor to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is able to provide a low gate charge, low RDS (on), and fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for uninterruptible power supplies and synchronous rectification.
FDC645N Features
-
Low gate charge
-
Low RDS (on)
-
Low on-state resistance
-
Superior switching performance
-
Available in the SuperSOT-6 package
FDC645N Applications
-
Switching applications
-
Uninterruptible power supplies
-
Synchronous rectification
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