FDC642P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Fall Time (Typ) :

7 ns

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Number of Pins :

6

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Power Dissipation-Max :

1.6W Ta

Rds On (Max) @ Id, Vgs :

65m Ω @ 4A, 4.5V

REACH SVHC :

No SVHC

Turn On Delay Time :

6 ns

Published :

2017

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

925pF @ 10V

Mount :

Surface Mount

Length :

3mm

Number of Elements :

1

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JESD-609 Code :

e3

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

-600mV

Rise Time :

7ns

Terminal Form :

Gull wing

Resistance :

65mOhm

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Weight :

36mg

Width :

1.7mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Current Rating :

-4A

Turn-Off Delay Time :

120 ns

Continuous Drain Current (ID) :

4A

Height :

1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Voltage - Rated DC :

-20V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Power Dissipation :

1.6W

Terminal Position :

Dual