FDC642P
- Mfr.Part #
- FDC642P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A SUPERSOT6
- Stock
- 60,934
- In Stock :
- 60,934
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- -20V
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- PowerTrench®
- REACH SVHC :
- No SVHC
- Published :
- 2017
- Length :
- 3mm
- Number of Elements :
- 1
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 36mg
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Surface Mount
- Power Dissipation :
- 1.6W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Rise Time :
- 7ns
- Vgs (Max) :
- ±8V
- Drain Current-Max (Abs) (ID) :
- 4A
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4A, 4.5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Threshold Voltage :
- -600mV
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 925pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 7 ns
- Drain to Source Breakdown Voltage :
- -20V
- Continuous Drain Current (ID) :
- 4A
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Current Rating :
- -4A
- Number of Terminations :
- 6
- Resistance :
- 65mOhm
- Turn-Off Delay Time :
- 120 ns
- Height :
- 1mm
- Width :
- 1.7mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1.6W Ta
- Datasheets
- FDC642P

P-Channel Tape & Reel (TR) 65m Ω @ 4A, 4.5V ±8V 925pF @ 10V 16nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC642P Features
The innovative PowerTrench? process from ON Semiconductor is used to create this P-Channel 2.5V specified MOSFET. This process has been carefully designed to reduce on-state resistance while maintaining low gate charge for excellent switching performance.
For applications where larger packages are unfeasible, these devices have been engineered to give outstanding power dissipation in a very compact footprint.
FDC642P Features
-
Max rDS(on) = 65 m? at VGS = -4.5 V, ID = -4.0 A
-
Max rDS(on) = 100 m? at VGS = -2.5 V, ID = -3.2 A
-
Fast switching speed
-
Low gate charge (11nC typical)
-
High-performance trench technology for extremely low rDS(on)
-
SuperSOTTM-6 package: small footprint (72% smaller than
-
standard SO-8); low profile (1 mm thick)
-
Termination is Lead-free and RoHS Compliant
FDC642P Applications
-
Load switch
-
Battery protection
-
Power management
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