FDC640P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

36mg

Published :

2001

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Terminal Form :

Gull wing

Series :

PowerTrench®

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Voltage - Rated DC :

-20V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn-Off Delay Time :

24 ns

Rise Time :

9ns

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Current Rating :

-4.5A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Continuous Drain Current (ID) :

4.5mA

Threshold Voltage :

-1V

Power Dissipation-Max :

1.6W Ta

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Pins :

6

Turn On Delay Time :

12 ns

Element Configuration :

Single

ECCN Code :

EAR99

Resistance :

53mOhm

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.7mm

Nominal Vgs :

-1 V

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Power Dissipation :

1.6W

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Vgs (Max) :

±12V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Fall Time (Typ) :

13 ns

Number of Terminations :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

53m Ω @ 4.5A, 4.5V

Height :

1mm