FDC6392S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

369pF @ 10V

Radiation Hardening :

No

Number of Terminations :

6

Vgs (Max) :

±12V

Series :

PowerTrench®

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

FET Feature :

Schottky Diode (Isolated)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

13 ns

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

Voltage - Rated DC :

-20V

Element Configuration :

Single

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-20V

Power Dissipation-Max :

960mW Ta

Current Rating :

-2.2A

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Position :

Dual

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.2A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Rise Time :

11ns

Continuous Drain Current (ID) :

2.2A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Published :

2002

Pbfree Code :

yes

Weight :

36mg

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

960mW