FDC6392S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Fall Time (Typ) :

11 ns

Transistor Element Material :

SILICON

FET Feature :

Schottky Diode (Isolated)

Mount :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs (Max) :

±12V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Power Dissipation-Max :

960mW Ta

Terminal Position :

Dual

Published :

2002

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current Rating :

-2.2A

Turn-Off Delay Time :

13 ns

Pbfree Code :

yes

Voltage - Rated DC :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

369pF @ 10V

ECCN Code :

EAR99

Rise Time :

11ns

Element Configuration :

Single

Continuous Drain Current (ID) :

2.2A

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Weight :

36mg

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Mounting Type :

Surface Mount

Series :

PowerTrench®

FET Type :

P-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Power Dissipation :

960mW

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.2A, 4.5V