FDC638P-P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

Axial

Number of Terminations :

2

Base Product Number :

FDC638

Resistance :

19.6 kOhms

Power (Watts) :

0.05W, 1/20W

Height - Seated (Max) :

--

Composition :

Metal Film

Current - Continuous Drain (Id) @ 25°C :

4.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Features :

Flame Retardant Coating, Military, Moisture Resistant, Safety

FET Type :

P-Channel

Size / Dimension :

0.065 Dia x 0.150 L (1.65mm x 3.81mm)

Mounting Type :

Surface Mount

Power Dissipation (Max) :

1.6W (Ta)

Vgs (Max) :

±8V

Temperature Coefficient :

±50ppm/°C

Product Status :

Obsolete

Package / Case :

Axial

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

Failure Rate :

--

Operating Temperature :

-65°C ~ 175°C

Technology :

MOSFET (Metal Oxide)

Package :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1160 pF @ 10 V

Tolerance :

±0.1%

Rds On (Max) @ Id, Vgs :

48mOhm @ 4.5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 4.5 V

Series :

Military, MIL-R-10509/8, RN50