FDC638P
- Mfr.Part #
- FDC638P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.5A SUPERSOT6
- Stock
- 274,697
- In Stock :
- 274,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 4.5A, 4.5V
- Max Junction Temperature (Tj) :
- 150°C
- Published :
- 2001
- Number of Elements :
- 1
- Width :
- 1.7mm
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Weight :
- 36mg
- Rise Time :
- 9ns
- Element Configuration :
- Single
- Voltage - Rated DC :
- -20V
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 6
- Dual Supply Voltage :
- -20V
- Turn-Off Delay Time :
- 33 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1160pF @ 10V
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 12 ns
- Power Dissipation :
- 1.6W
- Length :
- 3mm
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Radiation Hardening :
- No
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ) :
- 9 ns
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- -800mV
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Continuous Drain Current (ID) :
- -4.5A
- Gate to Source Voltage (Vgs) :
- 8V
- Nominal Vgs :
- -800 mV
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 48mOhm
- Power Dissipation-Max :
- 1.6W Ta
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Current Rating :
- -4.5A
- Vgs (Max) :
- ±8V
- Datasheets
- FDC638P

P-Channel Tape & Reel (TR) 48m Ω @ 4.5A, 4.5V ±8V 1160pF @ 10V 14nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC638P Description
FDC638P is a type of P-channel PowerTrench? specified MOSFET provided by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is able to provide on-state resistance, low gate charge, and advanced switching performance. Due to its specific characteristics and reliable performance, it is ideally suitable for load switch, battery management, and DC-DC conversion.
FDC638P Features
-
Low gate charge
-
Low RDS (on)
-
Low on-state resistance
-
Superior switching performance
-
Available in the SuperSOT package
FDC638P Applications
-
Load switch
-
Battery management
-
Battery charging circuits
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