FDC638P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.6W Ta

Turn On Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Terminations :

6

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Length :

3mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-4.5A

REACH SVHC :

No SVHC

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 10V

Terminal Form :

Gull wing

Contact Plating :

Tin

Terminal Position :

Dual

Threshold Voltage :

-800mV

Mount :

Surface Mount

Rise Time :

9ns

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Width :

1.7mm

Weight :

36mg

Height :

1.1mm

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Type :

P-Channel

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

48m Ω @ 4.5A, 4.5V

Current Rating :

-4.5A

Turn-Off Delay Time :

33 ns

Radiation Hardening :

No

Power Dissipation :

1.6W

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Dual Supply Voltage :

-20V

Published :

2001

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-20V

Voltage - Rated DC :

-20V

Nominal Vgs :

-800 mV

Resistance :

48mOhm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V