FDC638APZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Lead Free :

Lead Free

FET Type :

P-Channel

Power Dissipation-Max :

1.6W Ta

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Power Dissipation :

1.6W

Dual Supply Voltage :

-20V

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Rise Time :

20ns

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

48 ns

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Current Rating :

-4.5A

Number of Pins :

6

Turn On Delay Time :

6 ns

Continuous Drain Current (ID) :

-4.5A

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Contact Plating :

Tin

Height :

1.1mm

Qualification Status :

Not Qualified

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

43m Ω @ 4.5A, 4.5V

Number of Elements :

1

Width :

1.7mm

Resistance :

43mOhm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

-12V

Series :

PowerTrench®

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Threshold Voltage :

-800mV

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Drain to Source Voltage (Vdss) :

20V

Weight :

36mg

Fall Time (Typ) :

20 ns