FDC638APZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Termination :

SMD/SMT

FET Type :

P-Channel

Length :

3mm

Turn On Delay Time :

6 ns

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

-800mV

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Width :

1.7mm

Voltage - Rated DC :

-12V

Resistance :

43mOhm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Current Rating :

-4.5A

Qualification Status :

Not Qualified

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

48 ns

Rise Time :

20ns

Factory Lead Time :

13 Weeks

Number of Terminations :

6

Number of Channels :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

12V

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

1.6W Ta

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

-20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Pbfree Code :

yes

Continuous Drain Current (ID) :

-4.5A

Height :

1.1mm

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

43m Ω @ 4.5A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Weight :

36mg

Series :

PowerTrench®

Fall Time (Typ) :

20 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation :

1.6W

Drain to Source Voltage (Vdss) :

20V