FDC637BNZ
- Mfr.Part #
- FDC637BNZ
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 6.2A SUPERSOT6
- Stock
- 101,877
- In Stock :
- 101,877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 800 mV
- Fall Time (Typ) :
- 6 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Ta
- Rise Time :
- 6ns
- Number of Channels :
- 1
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 6.2A, 4.5V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 6.2A
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- ECCN Code :
- EAR99
- Height :
- 1.1mm
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 895pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation-Max :
- 1.6W Ta
- Terminal Form :
- Gull wing
- Number of Terminations :
- 6
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Resistance :
- 24mOhm
- Threshold Voltage :
- 800mV
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Delay Time :
- 8 ns
- Number of Pins :
- 6
- Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Weight :
- 36mg
- Turn-Off Delay Time :
- 22 ns
- Vgs (Max) :
- ±12V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Datasheets
- FDC637BNZ

N-Channel Tape & Reel (TR) 24m Ω @ 6.2A, 4.5V ±12V 895pF @ 10V 12nC @ 4.5V SOT-23-6 Thin, TSOT-23-6
FDC637BNZ Description
FDC637BNZ is a type of P-channel PowerTrench? specified MOSFET provided by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is able to provide extremely low RDS (on) and fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switch, battery protection, and DC-DC conversion.
FDC637BNZ Features
-
Low gate charge
-
Low RDS (on)
-
Low on-state resistance
-
Superior switching performance
-
Available in the SuperSOT-6 package
FDC637BNZ Applications
-
Load switch
-
Battery protection
-
DC-DC conversion
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