FDC637BNZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

22 ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

6ns

ECCN Code :

EAR99

Height :

1.1mm

Turn On Delay Time :

8 ns

Weight :

36mg

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Power Dissipation-Max :

1.6W Ta

Resistance :

24mOhm

Terminal Finish :

Tin (Sn)

Number of Channels :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

FET Type :

N-Channel

Published :

2006

Transistor Application :

SWITCHING

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

6.2A

Input Capacitance (Ciss) (Max) @ Vds :

895pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

6

Threshold Voltage :

800mV

Nominal Vgs :

800 mV

Rds On (Max) @ Id, Vgs :

24m Ω @ 6.2A, 4.5V

Pbfree Code :

yes

Lead Free :

Lead Free

JESD-609 Code :

e3

Power Dissipation :

800mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6