FDC6302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Weight :

36mg

FET Feature :

Logic Level Gate

Fall Time (Typ) :

5 ns

Height :

1.12mm

Power Dissipation :

900mW

Drain to Source Breakdown Voltage :

-25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Terminations :

6

Mount :

Surface Mount

Turn On Delay Time :

5 ns

Current Rating :

-120mA

Voltage - Rated DC :

-25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Max Power Dissipation :

900mW

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Rise Time :

8ns

Nominal Vgs :

-1 V

FET Type :

2 P-Channel (Dual)

Published :

1997

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Voltage (Vdss) :

25V

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

8V

Dual Supply Voltage :

-25V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Number of Elements :

2

REACH SVHC :

No SVHC

Power - Max :

700mW

JESD-609 Code :

e3

Number of Pins :

6

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Pbfree Code :

yes

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

120mA

Turn-Off Delay Time :

9 ns

Threshold Voltage :

-1V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-120mA

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Width :

1.68mm

Length :

3mm

Terminal Finish :

Tin (Sn)