FDB8896

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2525pF @ 15V

Rise Time :

102ns

Series :

PowerTrench®

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

80W

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

19A Ta 93A Tc

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.31247g

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Number of Elements :

1

Continuous Drain Current (ID) :

93A

Threshold Voltage :

2.5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Resistance :

5.7mOhm

Published :

2004

Element Configuration :

Single

Turn-Off Delay Time :

58 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

80A

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Transistor Element Material :

SILICON

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

93A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 35A, 10V

Length :

3mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

FET Type :

N-Channel

Power Dissipation-Max :

80W Tc

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Fall Time (Typ) :

44 ns

Width :

1.7mm

Number of Terminations :

2

Height :

1mm

Avalanche Energy Rating (Eas) :

74 mJ

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Vgs (Max) :

±20V