FDB8896
- Mfr.Part #
- FDB8896
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A/93A TO263AB
- Stock
- 4,442
- In Stock :
- 4,442
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 9 ns
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 74 mJ
- Weight :
- 1.31247g
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 93A
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Rise Time :
- 102ns
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Width :
- 1.7mm
- Height :
- 1mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 80W
- Length :
- 3mm
- Turn-Off Delay Time :
- 58 ns
- Voltage - Rated DC :
- 30V
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 35A, 10V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Power Dissipation-Max :
- 80W Tc
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 93A Tc
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 93A
- Fall Time (Typ) :
- 44 ns
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 5.7mOhm
- Drain Current-Max (Abs) (ID) :
- 80A
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2525pF @ 15V
- Threshold Voltage :
- 2.5V
- Contact Plating :
- Tin
- Datasheets
- FDB8896
FDB8896 Documents

N-Channel Tape & Reel (TR) 5.7m Ω @ 35A, 10V ±20V 2525pF @ 15V 67nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8896 Description
The FDB8896 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low rDS(ON), and quick switching speed have all been tuned.
FDB8896 Features
-
Low gate charge
-
rDS(ON) = 5.7mΩ @ VGS = 10V, ID=35A
-
rDS(ON) = 6.8mΩ @ VGS = 4.5V, ID=35A
-
High power and current handling capability
-
High-performance trench technology for extremely low rDS(ON)
FDB8896 Applications
-
DC/DC converters
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