FDB8132

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

14100pF @ 15V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 80A, 10V

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0016Ohm

Avalanche Energy Rating (Eas) :

1904 mJ

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 13V

FET Type :

N-Channel

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

PowerTrench®

Power Dissipation-Max :

341W Tc

Number of Terminations :

2

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V