FDB8132

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0016Ohm

Qualification Status :

Not Qualified

Power Dissipation-Max :

341W Tc

Drain Current-Max (Abs) (ID) :

80A

Case Connection :

DRAIN

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1904 mJ

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Series :

PowerTrench®

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 80A, 10V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

14100pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1