FDB8132

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 13V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Surface Mount :

yes

Series :

PowerTrench®

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

341W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0016Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

1904 mJ

Transistor Element Material :

SILICON

Terminal Position :

Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

14100pF @ 15V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 80A, 10V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ