FDB8443

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

17.9ns

JESD-609 Code :

e3

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

188W Tc

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

25A

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

188W

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

ECCN Code :

EAR99

Number of Elements :

1

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

9310pF @ 25V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Number of Pins :

3

Turn On Delay Time :

18.4 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Turn-Off Delay Time :

55 ns

Current - Continuous Drain (Id) @ 25°C :

25A Ta 120A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

13.5 ns

Drain to Source Breakdown Voltage :

40V

JESD-30 Code :

R-PSSO-G2