FDB8160-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

243nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

1290 mJ

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0018Ohm

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

11825pF @ 15V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

80A

Power Dissipation-Max :

254W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Terminations :

2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Number of Elements :

1