FDB8160

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

Series :

PowerTrench®

Power Dissipation-Max :

254W Tc

Gate Charge (Qg) (Max) @ Vgs :

243nC @ 10V

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

11825pF @ 15V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.0018Ohm

Drain Current-Max (Abs) (ID) :

80A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

30V

Number of Terminations :

2

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1290 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Reach Compliance Code :

Compliant

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified