FDB8160

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

80A

Series :

PowerTrench®

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

243nC @ 10V

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

1290 mJ

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0018Ohm

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Power Dissipation-Max :

254W Tc

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

11825pF @ 15V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

RoHS Status :

RoHS Compliant

Terminal Position :

Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED