FDB8030L

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Mfr.Part #
FDB8030L
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
80A, 30V, 0.0035OHM, N-CHANNEL,
Stock
53,780
In Stock :
53,780

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current Rating :
80A
Height :
4.83mm
Number of Elements :
1
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
80A Ta
Number of Terminations :
2
Rise Time :
185ns
Continuous Drain Current (ID) :
80A
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Factory Lead Time :
15 Weeks
JESD-609 Code :
e3
ECCN Code :
EAR99
Number of Pins :
3
Mount :
Surface Mount
Published :
2017
Radiation Hardening :
No
Power Dissipation-Max :
187W Tc
Drain to Source Breakdown Voltage :
30V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
2V @ 250μA
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
200 ns
Series :
PowerTrench®
Transistor Element Material :
SILICON
Resistance :
3.5mOhm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Turn-Off Delay Time :
160 ns
Threshold Voltage :
1.5V
Vgs (Max) :
±20V
FET Type :
N-Channel
REACH SVHC :
No SVHC
Contact Plating :
Tin
Turn On Delay Time :
20 ns
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 15V
Width :
9.65mm
Weight :
1.31247g
Voltage - Rated DC :
30V
Nominal Vgs :
1.5 V
Length :
10.97mm
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation :
187W
Rds On (Max) @ Id, Vgs :
3.5m Ω @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 5V
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-65°C~175°C TJ
Lead Free :
Lead Free
Additional Feature :
LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDB8030L
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB8030L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-65°C~175°C TJ, FDB8030L pinout, FDB8030L datasheet PDF, FDB8030L amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB8030L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDB8030L


N-Channel Tape & Reel (TR) 3.5m Ω @ 80A, 10V ±20V 10500pF @ 15V 170nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB8030L Description


The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and a lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.



FDB8030L Features


  • 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V

                        RDS(ON) = 0.0045 ? @ VGS = 4.5 V

  • Critical DC electrical parameters specified at elevated temperature

  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor

  • High performance trench technology for extremely low RDS(ON)

  • 175°C maximum junction temperature rating



FDB8030L Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives

  • Railway traction which is mostly through d.c. drives

  • Industrial


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