FDB8030L
- Mfr.Part #
- FDB8030L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263AB
- Stock
- 53,780
- In Stock :
- 53,780
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 5V
- Fall Time (Typ) :
- 200 ns
- Weight :
- 1.31247g
- Nominal Vgs :
- 1.5 V
- Height :
- 4.83mm
- Width :
- 9.65mm
- Rise Time :
- 185ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Resistance :
- 3.5mOhm
- Turn On Delay Time :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 80A, 10V
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Length :
- 10.97mm
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Operating Temperature :
- -65°C~175°C TJ
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 160 ns
- Series :
- PowerTrench®
- Threshold Voltage :
- 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 187W
- Continuous Drain Current (ID) :
- 80A
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 187W Tc
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- Current Rating :
- 80A
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2017
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Datasheets
- FDB8030L
FDB8030L Documents

N-Channel Tape & Reel (TR) 3.5m Ω @ 80A, 10V ±20V 10500pF @ 15V 170nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8030L Description
The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and a lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
FDB8030L Features
-
80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V
RDS(ON) = 0.0045 ? @ VGS = 4.5 V
-
Critical DC electrical parameters specified at elevated temperature
-
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
-
High performance trench technology for extremely low RDS(ON)
-
175°C maximum junction temperature rating
FDB8030L Applications
-
Induction furnaces
-
Arc furnaces and arc welders
-
Steel rolling mills
-
Large motors with periodic loading
-
Thyristor drives
-
Railway traction which is mostly through d.c. drives
-
Industrial
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