FDB8441-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Turn-Off Delay Time :

75 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

24ns

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0025Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

28A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Weight :

1.31247g

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Continuous Drain Current (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Power Dissipation :

300W

Number of Elements :

1

Fall Time (Typ) :

17.9 ns

Avalanche Energy Rating (Eas) :

947 mJ

Pbfree Code :

yes

Mount :

Surface Mount

Case Connection :

DRAIN

Element Configuration :

Single

Power Dissipation-Max :

300W Tc

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 80A Tc

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V