FDB8441-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Radiation Hardening :

No

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

75 ns

Fall Time (Typ) :

17.9 ns

Number of Terminations :

2

Continuous Drain Current (ID) :

80A

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 80A Tc

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, PowerTrench®

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Rise Time :

24ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Weight :

1.31247g

Turn On Delay Time :

23 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

947 mJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0025Ohm

Drain Current-Max (Abs) (ID) :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

300W