FDB8880

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

107ns

Width :

11.33mm

Power Dissipation :

55W

Continuous Drain Current (ID) :

54A

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 15V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

PowerTrench®

Pbfree Code :

yes

Power Dissipation-Max :

55W Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Element Configuration :

Single

Transistor Element Material :

SILICON

Height :

4.83mm

REACH SVHC :

No SVHC

Turn On Delay Time :

8 ns

Vgs (Max) :

±20V

Threshold Voltage :

2.5V

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

51 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 40A, 10V

ECCN Code :

EAR99

Number of Pins :

3

Voltage - Rated DC :

30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 54A Tc

Weight :

1.31247g

Lead Free :

Lead Free

Turn-Off Delay Time :

47 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

30V

Published :

2005

Radiation Hardening :

No

Current Rating :

54A

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Elements :

1