FDB8876

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.0103Ohm

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

70W Tc

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Surface Mount :

yes

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 40A, 10V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

71A Tc

Drain Current-Max (Abs) (ID) :

71A

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 15V

DS Breakdown Voltage-Min :

30V

Series :

PowerTrench®

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

180 mJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE