FDB8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

75 ns

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Power Dissipation :

160W

Packaging :

Tape and Reel (TR)

Weight :

1.31247g

FET Type :

N-Channel

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

160W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 35A, 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

23A Ta 160A Tc

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Number of Terminations :

2

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Lead Free :

Lead Free

Element Configuration :

Single

Current Rating :

160A

Fall Time (Typ) :

47 ns

Rise Time :

98ns

Vgs (Max) :

±20V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0044Ohm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

35A

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V

JESD-609 Code :

e3