FDB8870
- Mfr.Part #
- FDB8870
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A/160A TO263AB
- Stock
- 21,015
- In Stock :
- 21,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation :
- 160W
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 160A Tc
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 35A
- Number of Pins :
- 3
- Power Dissipation-Max :
- 160W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 15V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 98ns
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 75 ns
- Factory Lead Time :
- 10 Weeks
- Fall Time (Typ) :
- 47 ns
- Number of Elements :
- 1
- Weight :
- 1.31247g
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 30V
- Turn On Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 132nC @ 10V
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 160A
- Datasheets
- FDB8870
FDB8870 Documents

N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5200pF @ 15V 132nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8870 Description
FDB8870 is a type of N-channel PowerTrench? MOSFET provided by ON Semiconductor to improve the overall efficiency of DC/DC converters through either synchronous or conventional switching PWM controllers. It is able to provide low gate charge and low RDS (on) while ensuring high power and current handling capability.
FDB8870 Features
-
Low gate charge
-
Low RDS (on)
-
Available in the TO-263AB package
-
High-performance trench technology
-
High power and current handling capability
FDB8870 Applications
-
DC/DC converters
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