FDB8860-F085

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

49 ns

Weight :

1.31247g

Input Capacitance (Ciss) (Max) @ Vds :

12585pF @ 15V

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

947 mJ

Power Dissipation-Max :

254W Tc

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0027Ohm

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Number of Pins :

3

Vgs (Max) :

±20V

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

214nC @ 10V

Series :

Automotive, AEC-Q101, PowerTrench®

Pbfree Code :

yes

Number of Elements :

1

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

31A

Power Dissipation :

254W

Terminal Form :

Gull wing

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 80A, 10V

Turn-Off Delay Time :

79 ns

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rise Time :

213ns

Drain to Source Breakdown Voltage :

30V