FDB8860

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

213ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2005

Fall Time (Typ) :

49 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

10 Weeks

Drain-source On Resistance-Max :

0.0027Ohm

Turn On Delay Time :

14 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Weight :

1.31247g

Height :

4.83mm

Width :

11.33mm

Number of Terminations :

2

JESD-609 Code :

e3

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Threshold Voltage :

1.7V

Drain to Source Breakdown Voltage :

30V

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

12585pF @ 15V

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 80A, 10V

Power Dissipation :

254W

Radiation Hardening :

No

ECCN Code :

EAR99

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

FET Type :

N-Channel

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Length :

10.67mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

947 mJ

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

214nC @ 10V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Turn-Off Delay Time :

79 ns

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Power Dissipation-Max :

254W Tc

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN