FDB8832-F085
- Mfr.Part #
- FDB8832-F085
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- FDB8832 - N-CHANNEL LOGIC LEVEL
- Stock
- 38,229
- In Stock :
- 38,229
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 34A Ta
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 80A
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Weight :
- 1.31247g
- Avalanche Energy Rating (Eas) :
- 1246 mJ
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 80A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.0022Ohm
- Fall Time (Typ) :
- 38 ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 11400pF @ 15V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 265nC @ 10V
- Turn On Delay Time :
- 24 ns
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 73ns
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation :
- 300W
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 54 ns
- Datasheets
- FDB8832-F085

N-Channel Tape & Reel (TR) 1.9m Ω @ 80A, 10V ±20V 11400pF @ 15V 265nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8832-F085 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1246 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11400pF @ 15V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 54 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDB8832-F085 Features
the avalanche energy rating (Eas) is 1246 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 54 ns
FDB8832-F085 Applications
There are a lot of ON Semiconductor
FDB8832-F085 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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