FDB86360-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

253nC @ 10V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

14600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Position :

Single

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Number of Terminations :

2

Factory Lead Time :

33 Weeks

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

110A

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1167 mJ

Drain-source On Resistance-Max :

0.0018Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Terminal Form :

Gull wing

Power Dissipation-Max :

333W Tc

DS Breakdown Voltage-Min :

80V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

80V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, PowerTrench®