FDB86135

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

704A

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

120A

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

11 ns

Power Dissipation-Max :

2.4W Ta 227W Tc

Number of Pins :

3

Avalanche Energy Rating (Eas) :

658 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

Threshold Voltage :

2V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Weight :

1.31247g

Turn On Delay Time :

22 ns

Pbfree Code :

yes

Additional Feature :

ULTRA LOW-ON RESISTANCE

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

37 ns

Power Dissipation :

227W

Height :

4.83mm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Form :

Gull wing

Rise Time :

54ns

Published :

2017

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

75A

Case Connection :

DRAIN

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

8 Weeks

Series :

PowerTrench®

REACH SVHC :

No SVHC

Length :

10.67mm

Mount :

Surface Mount