FDB86102LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2011

Turn On Delay Time :

6.6 ns

Threshold Voltage :

1.5V

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Lead Free

Power Dissipation-Max :

3.1W Ta

Width :

11.33mm

Transistor Element Material :

SILICON

Rise Time :

2.1ns

Input Capacitance (Ciss) (Max) @ Vds :

1275pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Length :

10.67mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 8.3A, 10V

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

18.2 ns

Pbfree Code :

yes

Fall Time (Typ) :

2.3 ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.1W

Nominal Vgs :

1.5 V

Height :

4.83mm

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta 30A Tc

Transistor Application :

SWITCHING

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Mount :

Surface Mount

Weight :

1.31247g

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

50A

Element Configuration :

Single

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.024Ohm

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Series :

PowerTrench®