FDB8453LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

16.1A Ta 50A Tc

Rds On (Max) @ Id, Vgs :

7m Ω @ 17.6A, 10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

253 mJ

Drain Current-Max (Abs) (ID) :

50A

Series :

PowerTrench®

Power Dissipation-Max :

3.1W Ta 66W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Number of Terminations :

2

Surface Mount :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

4

Drain-source On Resistance-Max :

0.011Ohm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3.545pF @ 20V

Qualification Status :

COMMERCIAL