FDB8444

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time :

12 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

70A

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 70A, 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation :

167W

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Rise Time :

78ns

Power Dissipation-Max :

167W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

8035pF @ 25V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

307 mJ

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Series :

PowerTrench®

Resistance :

5.5mOhm

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Weight :

1.31247g

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Turn-Off Delay Time :

48 ns

Number of Terminations :

2