FDB38N30U

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Mfr.Part #
FDB38N30U
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N CH 300V 38A D2PAK
Stock
19,332
In Stock :
19,332

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
UniFET™
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Avalanche Energy Rating (Eas) :
722 mJ
Continuous Drain Current (ID) :
38A
Turn On Delay Time :
33 ns
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
313W Tc
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
120m Ω @ 19A, 10V
Published :
2013
Rise Time :
80ns
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Fall Time (Typ) :
62 ns
Width :
9.65mm
Height :
4.83mm
Number of Terminations :
2
Weight :
1.31247g
Element Configuration :
Single
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
313W
Gate to Source Voltage (Vgs) :
30V
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
3340pF @ 25V
Pbfree Code :
yes
Number of Elements :
1
Vgs (Max) :
±30V
FET Type :
N-Channel
Factory Lead Time :
8 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
300V
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
133 ns
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Length :
10.67mm
Datasheets
FDB38N30U
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB38N30U from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, FDB38N30U pinout, FDB38N30U datasheet PDF, FDB38N30U amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB38N30U ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB38N30U


N-Channel Tape & Reel (TR) 120m Ω @ 19A, 10V ±30V 3340pF @ 25V 73nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB38N30U Description

FDB38N30U is an N-channel UniFETTM MOSFET. UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDB38N30U Features

RDS(on) = 120m? ( Max.)@ VGS = 10V, ID = 19A
Low gate charge ( Typ. 56nC)
Low Crss ( Typ. 55pF)
100% avalanche tested
RoHS Compliant
FDB38N30U Applications

Uninterruptible Power Supply
LCD/LED/PDP TV
AC-DC Power Supply
power factor correction (PFC)
flat panel display (FPD) TV power
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