FDB38N30U

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Series :

UniFET™

Fall Time (Typ) :

62 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Length :

10.67mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Weight :

1.31247g

Vgs (Max) :

±30V

Height :

4.83mm

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

722 mJ

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Turn-Off Delay Time :

133 ns

ECCN Code :

EAR99

JESD-609 Code :

e3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

38A

Rds On (Max) @ Id, Vgs :

120m Ω @ 19A, 10V

Published :

2013

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3340pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

33 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation-Max :

313W Tc

Power Dissipation :

313W

Lead Free :

Lead Free

Width :

9.65mm

Rise Time :

80ns

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

300V