FDB3652

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Terminal Form :

Gull wing

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

26 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Terminations :

2

Power Dissipation :

150W

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

9A

Length :

6.35mm

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

61A

Power Dissipation-Max :

150W Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

9A Ta 61A Tc

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

12 ns

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

45 ns

JESD-609 Code :

e3

Series :

PowerTrench®

Resistance :

16mOhm

Pbfree Code :

yes

Factory Lead Time :

36 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

1.31247g

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 20 hours ago)

Rds On (Max) @ Id, Vgs :

16m Ω @ 61A, 10V

Rise Time :

85ns

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

Height :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current Rating :

61A

Width :

6.35mm

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount