FDB3652

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

16m Ω @ 61A, 10V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

36 Weeks

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

61A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 20 hours ago)

Width :

6.35mm

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

ECCN Code :

EAR99

Fall Time (Typ) :

45 ns

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Power Dissipation-Max :

150W Tc

Power Dissipation :

150W

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

REACH SVHC :

No SVHC

Length :

6.35mm

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

9A Ta 61A Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9A

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Turn-Off Delay Time :

26 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

61A

Number of Terminations :

2

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Voltage - Rated DC :

100V

Mount :

Surface Mount

Nominal Vgs :

4 V

Resistance :

16mOhm

Weight :

1.31247g

Height :

6.35mm

Mounting Type :

Surface Mount

Rise Time :

85ns

Turn On Delay Time :

12 ns

Element Configuration :

Single

FET Type :

N-Channel