FDB3652
- Mfr.Part #
- FDB3652
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9A/61A D2PAK
- Stock
- 18,296
- In Stock :
- 18,296
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 6.35mm
- Element Configuration :
- Single
- Weight :
- 1.31247g
- Power Dissipation :
- 150W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 45 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn On Delay Time :
- 12 ns
- Power Dissipation-Max :
- 150W Tc
- Number of Terminations :
- 2
- Width :
- 6.35mm
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- FET Type :
- N-Channel
- Rise Time :
- 85ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Nominal Vgs :
- 4 V
- Turn-Off Delay Time :
- 26 ns
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Resistance :
- 16mOhm
- Mount :
- Surface Mount
- Current Rating :
- 61A
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 9A
- Continuous Drain Current (ID) :
- 61A
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 61A Tc
- Height :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 36 Weeks
- Threshold Voltage :
- 4V
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 20 hours ago)
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 61A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- FDB3652
FDB3652 Documents

N-Channel Tape & Reel (TR) 16m Ω @ 61A, 10V ±20V 2880pF @ 25V 53nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The FDB3652 is an N-channel MOSFET produced using advanced PowerTrench? process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter. And the main parameters of FDB3652 MOSFET is: Power MOSFET, N Channel, 100 V, 61 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount
FDB3652 Features
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A
Qg(tot) = 41nC (Typ.), VGS = 10V
FDB3652 Applications
Motor drives
Uninterruptible Power Supplies
Micro Solar Inverter
Synchronous Rectification for ATX / Server 1 Telecom PSU
Battery Protection Circuit
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