FDB3632_SB82115
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- Mfr.Part #
- FDB3632_SB82115
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A/80A D2PAK
- Stock
- 44,696
- In Stock ：
- 44,696
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 80A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 310W Tc
- Datasheets
- FDB3632_SB82115
N-Channel Bulk 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3632_SB82115 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (6V 10V) reduces this device's overall power consumption.
FDB3632_SB82115 Features
a 100V drain to source voltage (Vdss)
FDB3632_SB82115 Applications
There are a lot of ON Semiconductor
FDB3632_SB82115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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