FDB3632-F085

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Mfr.Part #
FDB3632-F085
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 12A TO263AB
Stock
14,023
In Stock :
14,023

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Weight :
1.31247g
Transistor Element Material :
SILICON
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Element Configuration :
Single
Fall Time (Typ) :
46 ns
Factory Lead Time :
2 Weeks
Power Dissipation :
310W
Power Dissipation-Max :
310W Tc
Rise Time :
39ns
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
12A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
338 mJ
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
9m Ω @ 80A, 10V
Series :
Automotive, AEC-Q101, PowerTrench®
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
12A Ta
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
100V
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Turn-Off Delay Time :
96 ns
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain-source On Resistance-Max :
0.009Ohm
JESD-609 Code :
e3
Pbfree Code :
yes
FET Type :
N-Channel
Mount :
Surface Mount
Datasheets
FDB3632-F085
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB3632-F085 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB3632-F085 pinout, FDB3632-F085 datasheet PDF, FDB3632-F085 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB3632-F085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB3632-F085


N-Channel Tape & Reel (TR) 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB3632-F085 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 338 mJ.A device's maximal input capacitance is 6000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 96 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

FDB3632-F085 Features


the avalanche energy rating (Eas) is 338 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns


FDB3632-F085 Applications


There are a lot of ON Semiconductor
FDB3632-F085 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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