FDB3632-F085
- Mfr.Part #
- FDB3632-F085
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A TO263AB
- Stock
- 14,023
- In Stock :
- 14,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Weight :
- 1.31247g
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Fall Time (Typ) :
- 46 ns
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 310W
- Power Dissipation-Max :
- 310W Tc
- Rise Time :
- 39ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 12A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 338 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 96 ns
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.009Ohm
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Datasheets
- FDB3632-F085

N-Channel Tape & Reel (TR) 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3632-F085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 338 mJ.A device's maximal input capacitance is 6000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 96 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDB3632-F085 Features
the avalanche energy rating (Eas) is 338 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
FDB3632-F085 Applications
There are a lot of ON Semiconductor
FDB3632-F085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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