FDB3502
- Mfr.Part #
- FDB3502
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 6A/14A TO263AB
- Stock
- 263
- In Stock :
- 263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta 14A Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 6A
- Turn On Delay Time :
- 9 ns
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 815pF @ 40V
- Fall Time (Typ) :
- 3 ns
- Width :
- 11.33mm
- Rise Time :
- 3ns
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 3.1W
- Length :
- 10.67mm
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 13 ns
- Power Dissipation-Max :
- 3.1W Ta 41W Tc
- Drain to Source Breakdown Voltage :
- 75V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Height :
- 4.83mm
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 47mOhm
- Published :
- 2007
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 6A, 10V
- Pbfree Code :
- yes
- Weight :
- 1.31247g
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 6A
- Pulsed Drain Current-Max (IDM) :
- 40A
- Datasheets
- FDB3502
FDB3502 Documents

N-Channel Tape & Reel (TR) 47m Ω @ 6A, 10V ±20V 815pF @ 40V 15nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description
The FDB3502 is a Power Trench? MOSFET with an N-Channel configuration. This N-Channel MOSFET is made with the innovative Power Trench? technology, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. Electrons are used to build a current channel in an N-Channel MOSFET. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications.
Features
● Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
● 100% UIL Tested
● RoHS Compliant
● Higher Performing
● Making Automotive Applications More Compact
Applications
● Synchronous Rectifier
● Consumer electronics
● MOS sensors
● Power MOSFETs
● Semiconductor memory
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