FDB3502

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Mfr.Part #
FDB3502
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 6A/14A TO263AB
Stock
263
In Stock :
263

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6A Ta 14A Tc
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
6A
Turn On Delay Time :
9 ns
Mount :
Surface Mount
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
815pF @ 40V
Fall Time (Typ) :
3 ns
Width :
11.33mm
Rise Time :
3ns
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
3.1W
Length :
10.67mm
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
54 mJ
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Turn-Off Delay Time :
13 ns
Power Dissipation-Max :
3.1W Ta 41W Tc
Drain to Source Breakdown Voltage :
75V
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 19 hours ago)
Lead Free :
Lead Free
Number of Terminations :
2
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Height :
4.83mm
Series :
PowerTrench®
Terminal Form :
Gull wing
ECCN Code :
EAR99
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Factory Lead Time :
8 Weeks
Resistance :
47mOhm
Published :
2007
Rds On (Max) @ Id, Vgs :
47m Ω @ 6A, 10V
Pbfree Code :
yes
Weight :
1.31247g
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
6A
Pulsed Drain Current-Max (IDM) :
40A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB3502 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB3502 pinout, FDB3502 datasheet PDF, FDB3502 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB3502 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB3502


N-Channel Tape & Reel (TR) 47m Ω @ 6A, 10V ±20V 815pF @ 40V 15nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description


The FDB3502 is a Power Trench? MOSFET with an N-Channel configuration. This N-Channel MOSFET is made with the innovative Power Trench? technology, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. Electrons are used to build a current channel in an N-Channel MOSFET. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications.



Features


● Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A

● 100% UIL Tested

● RoHS Compliant

● Higher Performing

● Making Automotive Applications More Compact



Applications


● Synchronous Rectifier

● Consumer electronics

● MOS sensors

● Power MOSFETs

● Semiconductor memory


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