FDB3682

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Mfr.Part #
FDB3682
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 6A/32A TO263
Stock
4,690
In Stock :
4,690

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Contact Plating :
Tin
Factory Lead Time :
8 Weeks
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
95W Tc
RoHS Status :
ROHS3 Compliant
Current Rating :
32A
FET Type :
N-Channel
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
6A Ta 32A Tc
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Series :
PowerTrench®
Number of Terminations :
2
Turn-Off Delay Time :
26 ns
Rds On (Max) @ Id, Vgs :
36m Ω @ 32A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
6A
Continuous Drain Current (ID) :
32A
Fall Time (Typ) :
32 ns
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Number of Elements :
1
Threshold Voltage :
4V
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Radiation Hardening :
No
Vgs (Max) :
±20V
Length :
10.67mm
Width :
11.33mm
Drain to Source Breakdown Voltage :
100V
Voltage - Rated DC :
100V
Input Capacitance (Ciss) (Max) @ Vds :
1250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Resistance :
36mOhm
Height :
4.83mm
JESD-609 Code :
e3
Number of Pins :
3
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 250µA
REACH SVHC :
No SVHC
Turn On Delay Time :
9 ns
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
Weight :
1.31247g
ECCN Code :
EAR99
Rise Time :
46ns
Avalanche Energy Rating (Eas) :
55 mJ
Power Dissipation :
95W
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB3682 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, FDB3682 pinout, FDB3682 datasheet PDF, FDB3682 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB3682 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB3682


N-Channel Tape & Reel (TR) 36m Ω @ 32A, 10V ±20V 1250pF @ 25V 28nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB3682 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 55 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

FDB3682 Features


the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V


FDB3682 Applications


There are a lot of ON Semiconductor
FDB3682 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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