FDB3682
- Mfr.Part #
- FDB3682
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6A/32A TO263
- Stock
- 4,690
- In Stock :
- 4,690
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 95W Tc
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 32A
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta 32A Tc
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Series :
- PowerTrench®
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 26 ns
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 32A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 6A
- Continuous Drain Current (ID) :
- 32A
- Fall Time (Typ) :
- 32 ns
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Elements :
- 1
- Threshold Voltage :
- 4V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Length :
- 10.67mm
- Width :
- 11.33mm
- Drain to Source Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 36mOhm
- Height :
- 4.83mm
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 9 ns
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Weight :
- 1.31247g
- ECCN Code :
- EAR99
- Rise Time :
- 46ns
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Power Dissipation :
- 95W
- Datasheets
- FDB3682
FDB3682 Documents

N-Channel Tape & Reel (TR) 36m Ω @ 32A, 10V ±20V 1250pF @ 25V 28nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3682 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 55 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 32A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDB3682 Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V
FDB3682 Applications
There are a lot of ON Semiconductor
FDB3682 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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