FDB3672

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.71pF @ 25V

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

120 mJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta 44A Tc

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7.2A

Pbfree Code :

yes

Case Connection :

DRAIN

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Position :

Single

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

28m Ω @ 44A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Power Dissipation-Max :

120W Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain-source On Resistance-Max :

0.028Ohm