FDB3652-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

182 mJ

Terminal Form :

Gull wing

Power Dissipation-Max :

150W Tc

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, PowerTrench®

Drain Current-Max (Abs) (ID) :

9A

JESD-609 Code :

e3

Fall Time (Typ) :

45 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

150W

Number of Terminations :

2

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

16m Ω @ 61A, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Ta 61A Tc

Turn-Off Delay Time :

26 ns

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain-source On Resistance-Max :

0.016Ohm

Transistor Element Material :

SILICON

Rise Time :

85ns

Weight :

1.31247g

Continuous Drain Current (ID) :

61A

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2