FCP190N65F

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.3mm

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

20.6A

Packaging :

Tube

Fall Time (Typ) :

4.2 ns

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

400 mJ

JEDEC-95 Code :

TO-220AB

Published :

2014

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Number of Channels :

1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Series :

FRFET®, SuperFET® II

Length :

10.67mm

Package / Case :

TO-220-3

Element Configuration :

Single

Weight :

1.8g

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Turn On Delay Time :

25 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

20.6A Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

62 ns

Input Capacitance (Ciss) (Max) @ Vds :

3225pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Power Dissipation-Max :

208W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Rise Time :

11ns

Number of Terminations :

3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 2mA