FCP11N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Resistance :

380mOhm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

299m Ω @ 5.4A, 10V

Number of Elements :

1

Rise Time :

9.1ns

Packaging :

Tube

Number of Terminations :

3

Package / Case :

TO-220-3

Weight :

1.8g

Series :

SupreMOS™

Length :

10.16mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10.8A Tc

Height :

15.9mm

Vgs (Max) :

±30V

Factory Lead Time :

15 Weeks

Fall Time (Typ) :

10 ns

Turn On Delay Time :

13.6 ns

Published :

2004

Transistor Application :

SWITCHING

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Threshold Voltage :

2V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

94W

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

10.8A

Input Capacitance (Ciss) (Max) @ Vds :

1505pF @ 100V

Gate to Source Voltage (Vgs) :

30V

Width :

4.7mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

42 ns

Mount :

Through Hole

Power Dissipation-Max :

94W Tc

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

35.6nC @ 10V