FCP11N60

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Mfr.Part #
FCP11N60
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 11A TO220-3
Stock
30,940
In Stock :
30,940

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
600V
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Vgs (Max) :
±30V
Factory Lead Time :
15 Weeks
Power Dissipation :
94W
Weight :
1.8g
Number of Elements :
1
Packaging :
Tube
Number of Pins :
3
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
299m Ω @ 5.4A, 10V
Operating Temperature :
-55°C~150°C TJ
Published :
2004
FET Type :
N-Channel
Length :
10.16mm
Resistance :
380mOhm
Gate Charge (Qg) (Max) @ Vgs :
35.6nC @ 10V
Terminal Finish :
Tin (Sn)
Rise Time :
9.1ns
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Continuous Drain Current (ID) :
10.8A
Pbfree Code :
yes
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
2V
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1505pF @ 100V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Turn On Delay Time :
13.6 ns
Element Configuration :
Single
Height :
15.9mm
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
10 ns
Power Dissipation-Max :
94W Tc
Width :
4.7mm
Current - Continuous Drain (Id) @ 25°C :
10.8A Tc
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-220-3
Series :
SupreMOS™
Turn-Off Delay Time :
42 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP11N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, FCP11N60 pinout, FCP11N60 datasheet PDF, FCP11N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP11N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP11N60


N-Channel Tube 299m Ω @ 5.4A, 10V ±30V 1505pF @ 100V 35.6nC @ 10V TO-220-3

FCP11N60N  Description


The  FCP11N60N SupreMOS? MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench-filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance and ruggedness.



FCP11N60N  Features


  • RDS(on) = 255mΩ( Typ.) @ VGS = 10V, ID = 5.4A

  • Ultra-low gate charge ( Typ. Qg = 27.4nC )

  • Low effective output capacitance ( Typ. Coss.eff = 130pF )

  • 100% avalanche tested

  • RoHS compliant



FCP11N60N  Applications


  • General usage and suitable for many different applications


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