FCP110N65F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

21ns

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

FRFET®, SuperFET® II

Height :

16.3mm

Vgs (Max) :

±20V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Continuous Drain Current (ID) :

35A

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

4895pF @ 100V

Number of Elements :

1

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Packaging :

Tube

Fall Time (Typ) :

5.7 ns

Turn On Delay Time :

31 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

357W Tc

Turn-Off Delay Time :

89 ns

Weight :

1.8g

Avalanche Energy Rating (Eas) :

809 mJ

Rds On (Max) @ Id, Vgs :

110m Ω @ 17.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Length :

10.67mm

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 3.5mA

FET Type :

N-Channel