FCP104N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Weight :

1.8g

ECCN Code :

EAR99

Power Dissipation-Max :

357W Tc

Gate to Source Voltage (Vgs) :

5V

Operating Mode :

ENHANCEMENT MODE

Width :

4.672mm

Packaging :

Tube

Published :

2013

Height :

15.215mm

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

34 ns

JESD-609 Code :

e3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Rise Time :

50ns

Fall Time (Typ) :

21.4 ns

Mounting Type :

Through Hole

Length :

10.36mm

Series :

HiPerFET™, Polar™

Turn-Off Delay Time :

102 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6130pF @ 25V

Rds On (Max) @ Id, Vgs :

104m Ω @ 18.5A, 10V

Continuous Drain Current (ID) :

37A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

809 mJ

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

37A Tc