FCP11N60F
- Mfr.Part #
- FCP11N60F
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 24,401
- In Stock :
- 24,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Rise Time :
- 98ns
- Weight :
- 1.8g
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 11A
- Threshold Voltage :
- 5V
- Height :
- 9.4mm
- RoHS Status :
- ROHS3 Compliant
- Quiescent Current :
- 100μA
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperFET™
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 10.1mm
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 56 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- Width :
- 4.7mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 125W
- Number of Pins :
- 3
- Power Dissipation-Max :
- 125W Tc
- Current Rating :
- 11A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Nominal Vgs :
- 5 V
- Resistance :
- 380mOhm
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Termination :
- Through Hole
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1490pF @ 25V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 34 ns
- Dual Supply Voltage :
- 600V
- Turn-Off Delay Time :
- 119 ns
- Packaging :
- Tube
- FET Type :
- N-Channel
- Published :
- 2005
- Datasheets
- FCP11N60F
FCP11N60F Documents

N-Channel Tube 380m Ω @ 5.5A, 10V ±30V 1490pF @ 25V 52nC @ 10V TO-220-3
FCP11N60F Description
FCP11N60F MOSFET is the very first generation high voltage super-junction MOSFET that utilizes charge balance technology to deliver low resistance to on-resistance as well as lower the gate's charge. ON Semiconductor FCP11N60F is specifically designed to reduce loss of conduction, and offer superior switching efficiency, dv/dt rates, and greater avalanche power. Therefore, MOSFET FCP11N60F is ideal for switching power applications, such as PFC server/telecom energy, FPD Television power ATX power, and the power of industrial applications. With MOSFET’s enhanced body diode reverse-recovery performance will eliminate additional components and enhance the reliability of the system.
FCP11N60F Features
650V @TJ = 150°C
Typ. RDS(on) = 320mΩ
Fast recovery type ( trr = 120ns )
Ultra low gate charge ( Typ. Qg = 40nC )
Low effective output capacitance ( Typ. Coss.eff = 95pF )
100% avalanche tested
RoHS compliant
FCP11N60F Applications
Switching applications
PFC
server/telecom power
FPD TV power
ATX power
Industrial power
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