FCP11N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

600V

Rise Time :

98ns

Height :

9.4mm

Package / Case :

TO-220-3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Weight :

1.8g

Lead Free :

Lead Free

Resistance :

380mOhm

Termination :

Through Hole

Transistor Element Material :

SILICON

Mount :

Through Hole

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Current Rating :

11A

Operating Temperature :

-55°C~150°C TJ

Length :

10.1mm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Fall Time (Typ) :

56 ns

Nominal Vgs :

5 V

Series :

SuperFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Turn-Off Delay Time :

119 ns

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 25V

Vgs (Max) :

±30V

Width :

4.7mm

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Turn On Delay Time :

34 ns

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Qualification Status :

Not Qualified

Power Dissipation :

125W

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Published :

2005

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

600V

Dual Supply Voltage :

600V

Element Configuration :

Single

Threshold Voltage :

5V

Power Dissipation-Max :

125W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Quiescent Current :

100μA

Continuous Drain Current (ID) :

11A