FCP11N60F

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Mfr.Part #
FCP11N60F
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 11A TO220-3
Stock
24,401
In Stock :
24,401

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Turn-Off Delay Time :
119 ns
Length :
10.1mm
Terminal Finish :
Tin (Sn)
Series :
SuperFET™
FET Type :
N-Channel
Rise Time :
98ns
Turn On Delay Time :
34 ns
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±30V
Mount :
Through Hole
Element Configuration :
Single
Factory Lead Time :
12 Weeks
Termination :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Quiescent Current :
100μA
Fall Time (Typ) :
56 ns
Weight :
1.8g
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Voltage - Rated DC :
600V
Transistor Application :
SWITCHING
Packaging :
Tube
Current Rating :
11A
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Nominal Vgs :
5 V
Vgs(th) (Max) @ Id :
5V @ 250μA
Height :
9.4mm
Dual Supply Voltage :
600V
Resistance :
380mOhm
Width :
4.7mm
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Threshold Voltage :
5V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 25V
Lead Free :
Lead Free
Continuous Drain Current (ID) :
11A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Published :
2005
Number of Elements :
1
Drain to Source Breakdown Voltage :
600V
JESD-609 Code :
e3
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Power Dissipation :
125W
Power Dissipation-Max :
125W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
380m Ω @ 5.5A, 10V
ECCN Code :
EAR99
Datasheets
FCP11N60F
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP11N60F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FCP11N60F pinout, FCP11N60F datasheet PDF, FCP11N60F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP11N60F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP11N60F


N-Channel Tube 380m Ω @ 5.5A, 10V ±30V 1490pF @ 25V 52nC @ 10V TO-220-3


FCP11N60F Description


FCP11N60F MOSFET is the very first generation high voltage super-junction MOSFET that utilizes charge balance technology to deliver low resistance to on-resistance as well as lower the gate's charge. ON Semiconductor FCP11N60F is specifically designed to reduce loss of conduction, and offer superior switching efficiency, dv/dt rates, and greater avalanche power. Therefore, MOSFET FCP11N60F is ideal for switching power applications, such as PFC server/telecom energy, FPD Television power ATX power, and the power of industrial applications. With MOSFET’s enhanced body diode reverse-recovery performance will eliminate additional components and enhance the reliability of the system.

FCP11N60F Features


650V @TJ = 150°C
Typ. RDS(on) = 320mΩ
Fast recovery type ( trr = 120ns )
Ultra low gate charge ( Typ. Qg = 40nC )
Low effective output capacitance ( Typ. Coss.eff = 95pF )
100% avalanche tested
RoHS compliant


FCP11N60F Applications


Switching applications
PFC
server/telecom power
FPD TV power
ATX power
Industrial power
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